ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,636, issued on Oct. 27, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device and manufacture method ther... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,637, issued on Oct. 27, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Dongky... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,638, issued on Oct. 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Backside metal rom device, layo... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,639, issued on Oct. 27, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea). "Single poly non-volatile memory device and manufact... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,640, issued on Oct. 27, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was ... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,641, issued on Oct. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device having discharge contact structure an... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,642, issued on Oct. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device with improved word line failur... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,643, issued on Oct. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device" was invented by Jae Taek Kim (Icheon... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,644, issued on Oct. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Memory device including interface between conductive layer... Read More
ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,645, issued on Oct. 27, was assigned to SK hynic Inc. (Icheon-si, South Korea). "Method of manufacturing memory device having a source laye... Read More